2N3502 2N3503 2N3504 2N3505
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178...
2N3502 2N3503 2N3504 2N3505
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
PNP SILICON PLANAR EPITAXIAL
TRANSISTORS
5.33 (0.210) 4.32 (0.170)
12.7 (0.500) min.
FEATURES
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
0.48 (0.019) 0.41 (0.016) dia.
2.54 (0.100) Nom.
3 2
1
TO18 METAL PACKAGE
PIN 1 – Emitter PIN 2 – Base
8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 )
PIN 3 – Collector
7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 )
6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 )
APPLICATIONS:
0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia .
1 2 .7 0 (0 .5 0 0 ) m in .
5 .0 8 (0 .2 0 0 ) ty p .
These
PNP silicon planar epitaxial trasistors are designed for digital and analog applications at current levels up 0.5 amps.
2 .5 4 (0 .1 0 0 )
0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 )
!
4 5 °
TO5 METAL PACKAGE
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS(TA = 25°C unless otherwise stated) Maximum Voltages VCBO VCEO VEBO Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage 2N3503 2N3505 - 60V -60V -5V 2N3502 2N3503 3W 0.7 W 2N3502 2N3504 -45V -45V -5V 2N3504 2N3505 1.3 W 0.4 W
Maximum Power Dissipation PD PD TJ Semelab plc. Total Dissipation @ 25°C Case Temperature Total Dissipation@ 25°C Free Air Temperature Storage Temperature Operating Junction Temperature
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