TSP15U50S

TSP15U50S Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Ideal for automated placement - Moisture sensitivity level : level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-277A(SMPC) MECHANICAL DATA Case：TO-277A(SMPC) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal：Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity：Indicated by cathode band Weight： 0.095 gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IF = 5A Maximum instantaneous forward voltage per diode (Note 1) IF = 7.5A TJ = 25°C IF = 15A IF = 5A IF = 7.5A TJ = 125°C IF = 15A Maximum instantaneous reverse current per diode at rated reverse voltage Maximum DC reverse voltage Typical thermal resistance per diode Operating temperature range Storage temperature range Note1 : Pulse Test with Pulse Width=300μs, 1% Duty Cycle TJ = 25°C TJ = ...