DC COMPONENTS CO., LTD.
R
2SA1300
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR...
DC COMPONENTS CO., LTD.
R
2SA1300
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for use Strobe flash and medium power amplifier applications.
Pinning
1 = Emitter 2 = Collector 3 = Base
.190(4.83) .170(4.33) .190(4.83) .170(4.33)
TO-92
2 Typ 2 Typ
o
o
Absolute Maximum Ratings(TA=25
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCES VCEO VEBO IC IC IB PD TJ TSTG
o
C) Rating -20 -20 -10 -6 -2 -5 -2 750 +150 -55 to +150 Unit V V V V A A A mW
o o
Symbol
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
3 2 1
.050 o o 5 Typ. 5 Typ. (1.27) Typ
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCEO BVEBO ICBO IEBO
(1)
Min -10 -6 140 60 -
Typ -0.3 -0.83 140 50
Max -100 -100 -0.5 -1.5 1000 -
Unit V V nA nA V V MHz pF
Test Conditions IC=-10mA, IB=0 IE=-1mA, IC=0 VCE=-20V, IE=0 VBE=-6V, IC=0 IC=-2A, IB=-50mA IC=-2A, VCE=-1V IC=-0.5A, VCE=-1V IC=-2A, VCE=-1V IC=-0.5A, VCE=-1V VCE=-10V, f=1KHz, IE=0
Collector-Emitter Breakdown Volatge Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Volt...