2SA1330

SMD Type Transistors Features High DC current gain. High voltage. ● Complementary to 2SC3360 PNP Transistors 2SA1330 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 +0.12.4 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -200 -200 -5 -100 200 150 -55 to +150 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage VCBO VCEO VEBO Ic= -100 μA， IE=0 Ic= -1 mA， IB=0 IE= -100μA， IC=0 Collector-base cut-off current ICBO VCB= -200 V , IE=0 Emitter cut-off current IEBO VEB= -5V , IC=0 Collector-emitter saturation voltage * VCE(sat) IC=-50 mA, IB=- 5mA Base - emitter saturation voltage * VBE(sat) IC=-50 mA, IB=- 5mA Base - emitter voltage * DC current gain * VBE VCE= -10V, IC= -10mA hFE（1） VCE= -10V, IC= -10mA hFE（2） VCE= -10V, IC=-50mA Turn-on time Storage time Turn-off time tr ts VCC=-10V,VBE(off)=2.5V IC=-10mA,IB1=IB2=-1.0mA toff Collector output capacitance Cob VCB= -30V, IE= 0,f=1MHz Transition frequency fT VCE= -10V, IE= 10mA * Pulse test: tp 350 us; duty cycle 0.02. ■ Classification of hfe(1) Type 2SA1330-O5 2SA1330-O6 2SA1330-O7 Range 90-180 ...