2SC3606

SMD Type Transistors NPN Transistors 2SC3606 ■ Features ● Collector Current Capability IC=80mA ● Collector Emitter Voltage VCEO=12V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB PC TJ Tstg Rating 20 12 3 80 40 150 125 -55 to 125 ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Insertion Power Gain Noise Figure Reverse transfer capacitance Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= 100 μA， IE= 0 VCEO Ic= 1 mA， IB= 0 VEBO IE= 100μA， IC= 0 ICBO VCB= 10V , IE= 0 IEBO VEB= 3V , IC=0 VCE(sat) IC=80 mA, IB=8mA VBE(sat) IC=80 mA, IB=8mA hFE VCE= 10V, IC= 20mA |S21e|2 VCE = 10V, IC = 20 mA, f=0.5GHz VCE = 10V, IC = 20 mA, f=1GHz VCE = 10V, IC = 5 mA, f=0.5GHz NF VCE = 10V, IC = 5 mA, f=1GHz Cre VCB= 10V, IE= 0,f=1MHz Cob VCB= 10V, IE= 0,f=1MHz fT VCE= 10V, IC=20mA ■ Marking Marking MH Unit V mA mW ℃ 0-0.1 +0.10.38 ...