isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Good Lin...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High voltage switching and amplifier applications. ·Color TV horizontal driver applications. ·Color TV chroma output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
100
mA
IB
Base Current-Continuous
50
mA
PC
Collector Power Dissipation
1.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3619
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA; IB= 1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10mA; IB= 1mA
ICBO
Collector Cutoff Current
VCB= 240V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 4mA; VCE= 10V
hFE-2
DC Current Gain
IC= 20mA; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 20mA; VCE= 20V
COB
Output Capacitance
IE= 0; VCB= 20V, ftest= 1MHz
2SC3619
MIN TYP. MAX UNIT
1.0
V
1.0
V
1
μA
1
μA
20
30
200
50
MHz
3
pF
Notice: ISC reserves the rights to make chang...