Document
SMD Type
High-Voltage Switching Applications 2SC3646
Transistors
Features
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Time
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm)
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Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg
Rating 120 100 6 1 2 500 1.3 150 -55 to +150
Unit V V V A A mW W
Electrical Characteristics Ta = 25
Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Testconditons VCB = 100V , IE = 0 VEB = 4V , IC = 0 120 100 6 100 0.2 0.85 120 13 80 See Test Circuit. 700 40 ns 400 0.6 1.2 V V MHz pF Min Typ Max 100 100 Unit nA nA V V V
V(BR)CBO IC = 10uA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10uA , IC = 0 hFE VCE = 5V , IC = 100mA
VCE(sat) IC = 400mA , IB = 40mA VBE(sat) IC = 400mA , IB = 40mA fT Cob ton tstg tf VCE = 10V , IC = 100mA VCB = 10V , IE = 0 , f = 1MHz
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SMD Type
2SC3646
Test Circuit
Transistors
hFE Classification
Marking Rank hFE 100 R 200 140 CB S 280 200 T 400
Electrical Characteristics Curves
2
www.kexin.com.cn
Free Datasheet http://www.datasheet4u.com/
SMD Type
2SC3646
Transistors
www.kexin.com.cn
3
Free Datasheet http://www.datasheet4u.com/
.