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2SC3650 Dataheets PDF



Part Number 2SC3650
Manufacturers Kexin
Logo Kexin
Description Transistor
Datasheet 2SC3650 Datasheet2SC3650 Datasheet (PDF)

SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature St.

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SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 30 25 15 1.2 2 500 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500mA VCE=10V, IC=50mA VCB=10V, f=1MHz 800 1500 220 17 0.12 0.85 30 25 15 0.5 1.2 Min Typ Max 0.1 0.1 3200 MHz pF V V V V V Unit ìA ìA VCE(sat) IC=500mA, IB=10mA VBE(sat) IC=500mA, IB=10mA V(BR)CBO IC=10ìA, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO IE=10ìA, IC=0 Marking Marking CF www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ .


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