2SC3652

2SC3652 Silicon NPN Epitaxial Application High frequency amplifier Outline TO-126 MOD 123 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC PC*1 Tj Tstg Ratings 30 20 3.5 0.3 0.5 0.8 5 150 –55 to +150 Unit V V V A A W W °C °C 2SC3652 Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to emitter breakdown V(BR)CEO voltage 20 Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage ICBO IEBO hFE VBE VCE(sat) — — 40 — — Gain bandwidth product fT Collector output capacitance Cob — — Input capacitance Cib — Note: 1. Pulse test Typ — — — — — — 1.2 5 10 Max — Unit V Test conditions IC = 10 mA, RBE = _ 1 mA 1 mA 200 1.2 V 2.0 V VCB = 25 V, IE = 0 VEB = 3 V, IC = 0 VCE = 5 V, IC = 50 mA*1 VCE = 5 V, IC = 300 mA*1 IC = 300 mA, IB = 60 mA*1 — GHz VCE = 5 V, IC = 100 mA*1 — pF VCB = 10 V, IE = 0, f = 1 MHz — pF VEB = 2 V, IC = 0, f = 1 MHz 2 Collector to emitter saturation voltage VCE(sat) (V) DC current transfer ratio hFE Collector current IC (A) Collector power dissipation PC (W) Maximum Collector Dissipation Curve 6 4 2 0 50 100 150 Case temperature TC (°C) Area of Safe Operation 1...