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2SC3658
Silicon NPN Power Transistors
Description
isc Silicon
NPN
Power
Transistor
INCHANGE Semiconductor 2SC3658 DESCRIPTION ·High Breakdown Voltage- : VCES= 1500V (Min) ·Built-in Damper Didoe ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2...
Inchange Semiconductor
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