2SC3659

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCES= 1700V (Min) ·Built-in Damper Didoe ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -45~150 ℃ 2SC3659 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3659 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A 1.5 V ICBO Collector Cutoff Current VCE= 1400V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 500 mA VECF C-E Diode Forward Voltage IF= 6A 2.0 V tf Fall Time IC= 5A, IB1= 1A, IB2= -2.5A, LB= 0 0.5 μs Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed ...