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2N3507L Dataheets PDF



Part Number 2N3507L
Manufacturers Semicoa Semiconductor
Logo Semicoa Semiconductor
Description NPN Transistor
Datasheet 2N3507L Datasheet2N3507L Datasheet (PDF)

Data Sheet No. 2N3507L Type 2N3507L Geometry 1506 Polarity NPN Qual Level: JAN - JANTXV Features: • General-purpose silicon transistor for switching and amplifier applications. Housed in TO-5 case. Also available in chip form using the 1506 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/349 which Semicoa meets in all cases. Generic Part Number: 2N3507L REF: MIL-PRF-19500/349 • • • TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Volta.

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Data Sheet No. 2N3507L Type 2N3507L Geometry 1506 Polarity NPN Qual Level: JAN - JANTXV Features: • General-purpose silicon transistor for switching and amplifier applications. Housed in TO-5 case. Also available in chip form using the 1506 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/349 which Semicoa meets in all cases. Generic Part Number: 2N3507L REF: MIL-PRF-19500/349 • • • TO-5 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Power Dissipation, TA = 25oC Derate above 25oC Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC PT Rating 50 80 5.0 3.0 1.0 5.71 Unit V V V A W mW/oC o TJ TSTG -65 to +200 -65 to +200 C C o Data Sheet No. 2N3507L Electrical Characteristics TC = 25 C unless otherwise specified o OFF Characteristics Collector-Base Breakdown Voltage IC = 10 µA Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 µA Collector-Emitter Cutoff Current VCE = 60 V, VEB = 4 V Collector-Emitter Cutoff Current o VCE = 60 V, VEB = 4 V, TA = +150 C Collector Current Continuous VCB = 50 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX1 ICEX2 IC Min 80 50 5.0 ----3.0 Max ------1.0 1.0 --- Unit V V V µA µA A ON Characteristics DC Current Gain IC = 500 mA, VCE = 1 V (pulsed) IC = 1.5 A, VCE = 2 V (pulsed) IC = 2.5 A, VCE = 3 V (pulsed) IC = 3.0 A, VCE = 5 V (pulsed) IC = 500 mA, VCE = 1 V (pulsed), TA = -55oC Symbol hFE1 hFE2 hFE3 hFE4 hFE5 VBE(sat)1 VBE(sat)2 VBE(sat)3 VCE(sat)1 VCE(sat)2 VCE(sat)3 Min 35 30 25 20 17 --0.9 --------- Max 175 150 ------1.0 1.4 2.0 0.5 1.0 1.5 Unit ----------V dc V dc V dc V dc V dc V dc Base-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA (pulsed) IC = 1.5 A, IB = 150 mA (pulsed) IC = 2.5 A, IB = 250 mA (pulsed) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 mA (pulsed) IC = 1.5 A, IB = 150 mA (pulsed) IC = 2.5 A, IB = 250 mA (pulsed) Small Signal Characteristics Magnitude of Common Emitter, Small Signal, Short Circuit Symbol |hFE| COBO CIBO Min 3.0 ----- Max 15 40 300 Unit --pF pF Forward Current Transfer Ratio VCE = 5 V, IC = 100 mA, f = 20 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 3 V, IC = 0, 100 kHz < f < 1 MHz Pulse Response Characteristics Delay Time IC = 1.5 A, IB1 = 150 mA Rise Time IC = 1.5 A, IB1 = 150 mA Storage Time IC = 1.5 mA, IB2 = IB1 = 150 mA Fall Time IC = 1.5 mA, IB2 = IB1 = 150 mA Symbol td tr ts tf Min --------- Max 15 30 55 35 Unit ns ns ns ns .


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