2SC3694

isc Silicon NPN Power Transistor 2SC3694 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 12A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 7.5 A 30 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3694 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.4A 0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 0.6A 0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8A; IB= 0.4A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 12A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCB= 60V; IE= 0 VCE= 60V;...