2SA1381

2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor March 2008 2SA1381/KSA1381 PNP Epitaxial Silicon Transistor Applications Audio, Voltage Amplifier and Current Source CRT Display, Video Output General Purpose Amplifier Features High Voltage : VCEO= -300V Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V Excellent Gain Linearity for low THD High Frequency: 150MHz Full thermal and electrical Spice models are available Complement to 2SC3503/KSC3503 1 TO-126 2.Collector 3.Base 1. Emitter Absolute Maximum Ratings* Symbol BVCBO BVCEO BVEBO IC ICP PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Ta = 25°C unless otherwise noted Parameter Ratings -300 -300 -5 -100 -200 7 1.2 - 55 ~ +150 Units V V V mA mA W W °C Total Device Dissipation, TC=25°C TC=125°C Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC * Device mounted on minimum pad size Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max. 17.8 Units °C/W hFE Classification Classification hFE C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320 © 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 1 www.fairchildsemi.com Free Datasheet http://www.datasheet4u.com/ 2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor Electrical Characteristics...