SMD Type
Product specification
2SA1418
Features
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Curr...
SMD Type
Product specification
2SA1418
Features
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm)
2
Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg
Rating -180 -160 -6 -0.7 -1.5 500 1.3 150 -55 to +150
Unit V V V A A mW W
Electrical Characteristics Ta = 25
Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Testconditons VCB = -120V , IE = 0 VEB = -4V , IC = 0 -180 -160 -6 100 -0.2 -0.85 120 11 60 See Test Circuit. 900 60 ns 400 -0.5 -1.2 V V MHz pF Min Typ Max -0.1 -0.1 Unit uA uA V V V
V(BR)CBO IC = -10uA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10uA , IC = 0 hFE VCE = -5V , IC = -100mA
VCE(sat) IC = -250mA , IB = -25mA VBE(sat) IC = -250mA , IB = -25mA fT Cob ton tstg tf VCE = -10V , IC = -50mA VCB = -10V , IE = 0 , f = 1MHz
1
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SMD Typ...