2SA1434

SMD Type PNP Transistors 2SA1434 TransistIoCrs Features Adoption of FBET process. High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). High VEBO (VEBO 15V). +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating -60 -50 -15 -100 -200 200 125 -55 to +125 ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Common base output capacitance Transition frequency Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCEO Ic= -1mA，RBE=∞ VEBO IE= -100μA， IC=0 ICBO VCB= -40V , IE=0 IEBO VEB= -10V , IC=0 VCE(sat) IC=-50 mA, IB=- 1mA VBE(sat) IC=-10 uA, IB=- 1mA hFE VCE= -5V, IC= -10mA Cob VCB= -10V, f=1MHz fT VCB= -10V,IC=-10mA Marking Marking FL Unit V V V mA mA mW Min Typ Max Unit -60 -50 V -15 -100 -100 nA -0.2 -0.5 -0.8 -1.1 V 500 800 1200 4.8 pF 100 MHz www.kexin.com.c...