Transistor
Product specification
2SA1575
Features
High fT.. High breakdown voltage. Small reverse transfer capacitance and excelle...
Description
Product specification
2SA1575
Features
High fT.. High breakdown voltage. Small reverse transfer capacitance and excellent. High-frequency characteristic. Adoption of FBET process.
Absolute Maximum Ratings TA=25
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector current (pulse) Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC 1.3 Tj Tstg 150 -55 to +150 W Rating -200 -200 -4 -100 -200 500 Unit V V V mA mA mW
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Product specification
2SA1575
Electrical Characteristics TA=25
Parameter Collector-base Breakdown voltage Collector-emitter Breakdown voltage Emitter-base Breakdown voltage Collector-base cutoff current Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base -emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Reverse Transfer Capacitance
3
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE = -10 V , IC = -60 mA VCE(sat) VBE(sat) fT Cob Cre IC = -20 mA , IB = -2 mA IE = -20 mA , IB = -2 mA VCE = -30 V , IC= -30 mA VCB = -30 V , IE = 0 , f = 1MHz VCB= -30 V, f = 1MHz 400 2.3 1.7 20 -1.0 -1.0 V V MHz pF pF Test conditions IC = -10 ìA , IE = 0 IC = -1mA ,RBE = IE = -100 ìA , IC = 0 VCB = -150 V , IE = 0 VEB = -2 V , ...
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