2SA1576AW

BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor FEATURES z z z Power dissipation.(PC=200mW) Excellent HFE Linearity. Complements the 2SC4081. Production specification 2SA1576AW Pb Lead-free APPLICATIONS z General purpose application. ORDERING INFORMATION Type No. 2SA1576AW Marking FQ/FR/FS SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Value -60 Units V Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous -50 -6 -150 V V mA Collector Dissipation Junction and Storage Temperature 200 -55~150 mW ℃ Document number: BL/SSSTF029 Rev.A www.galaxycn.com 1 Free Datasheet http://www.datasheet4u.com/ BL Galaxy Electrical PNP Silicon Epitaxial Planar Transistor Production specification 2SA1576AW ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions IC=-50μA,IE=0 IC=-1mA,IB=0 IE=-50μA,IC=0 VCB=-60V,IE=0 VEB=-6V,IC=0 VCE=-6V,IC=-1mA IC=-50mA, IB=-5mA VCE=-12V, IC= -2mA f=30MHz VCB=-12V,IE=0,f=1MHz 140 4 5 120 MIN -60 -50 -6 -0.1 -0.1 560 -0.5 V MHz pF TYP MAX UNIT V V V μA μA CLASSIFICAN...