SMD Type
TransistIoCrs
Features
Fast switching speed. High gain-bandwidth product. Low saturation voltage. ● Complemen...
SMD Type
TransistIoCrs
Features
Fast switching speed. High gain-bandwidth product. Low saturation voltage. ● Complementary to 2SC4168
PNP Transistors 2SA1607
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
+0.12.4 -0.1
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1 +0.05
-0.01
+0.10.97 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature
Electrical Characteristics Ta = 25
Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Delay time Rise time Storage time Fall time Output capacitance Transition frequency
■ Classification of hfe
Marking Rank hFE
YL3 3
60 120
YL4 4
90 180
1.Base 2.Emitter 3.collector
0-0.1 +0.10.38
-0.1
Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Rating -40 -20 -5 -150 -300 -30 200 150
-55 to +150
Unit V V V mA mA mA
mW
Symbol
Test Conditions
VCBO Ic= -100 μA, IE=0
VCEO Ic= -1 mA, RBE=∞
VEBO IE= -100μA, IC=0
ICBO VCB= -30 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-10 mA, IB=- 1mA
VBE(sat) IC=-10 mA, IB=- 1mA
hFE VCE= -1V, IC= -10mA
td
tr See specified Test Circuit
ts
tf
Cob VCE= -10V,f=100MHz
fT VCE= -10V, IC= -1mA
Min Typ Max Unit
...