isc Silicon PNP Power Transistor
2SB979
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·Good...
isc Silicon
PNP Power
Transistor
2SB979
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Junction Temperature
-8
A
60 W
3
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
PNP Power
Transistor
2SB979
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base -Emitter On Voltage
IC= -3A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -3A; VCE= -5V
fT
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz
MIN TYP. MAX UNIT
-2.0 V
-1.8 V
-50 μA
-50 μA
20
60
200
20
20
MHz
hFE-2Classifications
Q
S
P
60-120 80-160 100-200
NOTICE: ISC rese...