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2SB979

Inchange Semiconductor

Silicon PNP Darlington Power Transistor

isc Silicon PNP Power Transistor 2SB979 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good...


Inchange Semiconductor

2SB979

File Download Download 2SB979 Datasheet


Description
isc Silicon PNP Power Transistor 2SB979 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -8 A 60 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB979 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base -Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain IC= -3A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5 V; f= 1MHz MIN TYP. MAX UNIT -2.0 V -1.8 V -50 μA -50 μA 20 60 200 20 20 MHz  hFE-2Classifications Q S P 60-120 80-160 100-200 NOTICE: ISC rese...




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