DatasheetsPDF.com

2SB965 Dataheets PDF



Part Number 2SB965
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistors
Datasheet 2SB965 Datasheet2SB965 Datasheet (PDF)

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB965 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= -0.55V(Typ)@IC= -4.0A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Complement to Type 2SD1288 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120.

  2SB965   2SB965


2SB962-Z 2SB965 2SB966


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)