2SB954

isc Silicon PNP Power Transistor 2SB954 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@IC= -1A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V ICEO Collector Cutoff Current VCE= -30V; IB= 0 ICES Collector Cutoff Current VCE= -60V; VBE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.2A; VCE= -4V hFE-2 DC Current Gain IC= -1A; VCE= -4V  hFE-1 Classifications Q P 70-150 120-250 2SB954 MIN TYP. MAX UNIT -60 V -1.0 V -1.3 V -300 μA -200 μA -1 mA 70 250 15 NOTICE： ISC reserves the rights to make changes ...