SMD Type
Silicon PNP Epitaxial Planar Type 2SB956
Transistors
Features
Large collector power dissipation PC Low collec...
SMD Type
Silicon
PNP Epitaxial Planar Type 2SB956
Transistors
Features
Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -20 -20 -5 -1 -2 1 150 -55 to +150 Unit V V V A A mW
Electrical Characteristics Ta = 25
Parameter Collector-base voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance * Pulse measurement.
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Symbol VCBO VEBO ICBO hFE Testconditons IC = -1 mA, IB = 0 IE = -10 ìA, IC = 0 VCB = -10 V, IE = 0 VCE = -2 V, IC = -500 mA 130 Min -20 -5 -1 280 -0.5 -1.2 200 40 V V MHz pF Typ Max Unit V V nA
VCE(sat) IC = -1 A, IB = -50 mA VBE(sat) IC = -500 mA, IB = -50 mA fT Cob VCB = -6 V, IE = 50 mA, f = 200 MHz VCB = -6 V, IE = 0, f = 1 MHz
hFE Classification
Marking hFE HR 130 210 HS 180 280
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Free Datasheet http://www.datasheet4u.com/
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