2SB942A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB942 2SB942A DESCRIPTION ¡¤With TO-220Fa package ¡¤High forward current transfer ratio hFE which has satisfactory linearity ¡¤Low collector saturation voltage ¡¤Complement to type 2SD1267/1267A APPLICATIONS ¡¤For low-frequency power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25¡æ ) SYMBOL PARAMETER 2SB942 VCBO Collector-base voltage 2SB942A 2SB942 VCEO Collector-emitter voltage 2SB942A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25¡æ PC Collector power dissipation TC=25¡æ Tj Tstg Junction temperature Storage temperature 40 150 -55~150 ¡æ ¡æ Open collector Open base -80 -5 -4 -8 2 W V A A Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2SB942 IC=-30mA ,IB=0 2SB942A IC=-4A, IB=-0.4A IC=-3A ; VCE=-4V VEB=-5V; IC=0 2SB942 2SB942A 2SB942 2SB942A VCE=-30V; IB=0 CONDITIONS 2SB942 2SB942A SYMBOL MIN -60 TYP. MAX UNIT VCEO Collector-emitter voltage V -80 -1.5 -2 -1 V V mA VCEsat VBE IEBO Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current ICEO Collector cut-off current -0.7 VCE=-60V; IB=0 VCE=-60V; VBE=0 -0.4 VCE=-80V; VBE=0 IC=-1A ; VCE=-4V IC=-3A ...