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2N3634L Dataheets PDF



Part Number 2N3634L
Manufacturers Microsemi Corporation
Logo Microsemi Corporation
Description PNP SILICON AMPLIFIER TRANSISTOR
Datasheet 2N3634L Datasheet2N3634L Datasheet (PDF)

TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC 2N3634* 2N3635* 140 140 2N3636* 2N3637* 175 175 Unit TO-39* (TO-205AD) 2N3634, 2N3635 2N3636, 2N3637 Vdc Vdc 5.0 Vdc 1.0 Adc @ TA = +250C(1) 1.0 W .

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TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC 2N3634* 2N3635* 140 140 2N3636* 2N3637* 175 175 Unit TO-39* (TO-205AD) 2N3634, 2N3635 2N3636, 2N3637 Vdc Vdc 5.0 Vdc 1.0 Adc @ TA = +250C(1) 1.0 W PT @ TC = +250C(2) 5.0 W 0 Operating & Storage Junction Temperature Range -65 to +200 C TJ, Tstg *Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C TO-5* 2N3634, 2N3635 2N3636, 2N3637 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 50 10 10 Vdc ηAdc µAdc ηAdc µAdc µAdc ICBO 2N3634, 2N3635 IEBO ICEO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N3634, L, 2N3635, L, 2N3636, L, 2N3637, L JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit ON CHARACTERISTICS (3) Forward-Current Transfer Ratio IC = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 50 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc IC = 0.1 mAdc, VCE = 10 Vdc IC = 1.0 mAdc, VCE = 10 Vdc IC = 10 mAdc, VCE = 10 Vdc IC = 50 mAdc, VCE = 10 Vdc IC = 150 mAdc, VCE = 10 Vdc Collector-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 50 mAdc, IB = 5.0 mAdc Base-Emitter Saturation Voltage IC = 10 mAdc, IB = 1.0 mAdc IC = 50 mAdc, IB = 5.0 mAdc 2N3634, 2N3636 25 45 50 50 30 55 90 100 100 60 hFE 150 2N3635, 2N3637 hFE 300 VCE(sat) 0.3 0.6 0.8 0.9 Vdc VBE(sat) 0.65 Vdc DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 30 mAdc, VCE = 30 Vdc, f = 100 MHz 2N3634, 2N3636 2N3635, 2N3637 hfe 1.5 2.0 40 80 100 200 8.0 8.5 160 320 600 1200 200 10 75 5.0 3.0 3.0 Ω Ω µs pF pF Forward Current Transfer Ratio IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz Small-Signal Short-Circuit Input Impedance IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz Small-Signal Open-Circuit Output Admittance IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz Output Capacitance VCB = 20 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Input Capacitance VEB = 1.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Noise Figure VCE = 10 Vdc, IC = 0.5 mAdc, Rg = 1.0 Ω 2N3634, 2N3636 2N3635, 2N3637 2N3634, 2N3636 2N3635, 2N3637 hfe hje hoe Cobo Cibo f = 100 Hz f = 1.0 kHz f = 10 kHz NF dB SAFE OPERATING AREA DC Tests TC = 250C, 1 Cycle, t = 1.0 s Test 1 VCE = 100 Vdc, IC = 30 mAdc 2N3634, 2N3635 VCE = 130 Vdc, IC = 20 mAdc 2N3636, 2N3637 Test 2 VCE = 50 Vdc, IC = 95 mAdc Test 3 VCE = 5.0 Vdc, IC = 1.0 Adc (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%. 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 2 of 2 .


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