2SB859

isc Silicon PNP Power Transistor 2SB859 DESCRIPTION ·Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE(sat)= -2.0V(Max)@IC= -2A ·High Collector Power Dissipation ·Complement to Type 2SD1135 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 40 W 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A ; VCE= -5V ICBO Collector Cutoff Current VCB= -80V; IE= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -0.1A; VCE= -5V COB Collector Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V  hFE-1 Classifications B C 60-120 100-200 2SB859 MI...