2SB831

2SB831 Silicon PNP Epitaxial REJ03G0653-0200 (Previous ADE-208-1033) Rev.2.00 Aug.10.2005 Application Low frequency amplifier Complementary pair with 2SD1101 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –25 –20 –5 –0.7 –1 150 150 –55 to +150 Unit V V V A A mW °C °C Rev.2.00 Aug 10, 2005 page 1 of 5 Free Datasheet http://www.datasheet4u.com/ 2SB831 Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage V(BR)CBO Collector to emitter breakdown voltage V(BR)CEO Emitter to base breakdown voltage V(BR)EBO Collector cutoff current ICBO DC current transfer ratio hFE*1 Collector to emitter saturation voltage VCE(sat) Base to emitter voltage VBE Notes: 1. The 2SB831 is grouped by hFE as follows. 2. Pulse test Grade B C Mark BB BC hFE 85 to 170 120 to 240 Min –25 –20 –5 — 85 — — Typ — — — — — — — Max — — — –1.0 240 –0.5 –1.0 Unit V V V µA V V Test conditions IC = –10 µA, IE = 0 IC = –1 mA, RBE = ∞ IE = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –1 V, IC = –0.15 A*2 IC = –0.5 A, IB = –0.05 A*2 VCE = –1 V, IC = –0.15 A*2 Rev.2.00 Aug 10, 2005 page 2 of 5 Free Datasheet http://www.datasheet4u.com/ 2SB831 Main C...