2SB817E

Power Transistor (PNP) 2SB817E Power Transistor (PNP) Features 2SB817E transistor is designed for use in general purpose power amplifier, application Mechanical Data Case: Terminals: Weight: TO-3P, Plastic Package Plated leads solderable per MIL-STD-750, Method 2026 0.22 ounce, 6.2 gram TO-3P Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Power Dissipation at TC=25°C 2SB817E 160 140 6.0 12 15 100 0.8 1.25 -55 to +150 Unit V V V A A W W/° C ° C /W °C Conditions VCBO VCEO VEBO IC ICM Ptot Power Dissipation Derate above 25°C RθJC TJ, TSTG Thermal Resistance from Junction to Case Operating and Storage Junction Temperature Range TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2008-04-16 Page 1 of 3 Free Datasheet http://www.datasheet4u.com/ Power Transistor (PNP) 2SB817E Electrical Characteristics (T Ambient=25ºC unless noted otherwise) 2SB817E Symbol Description Min. 100 Max. 200 2.5 1.5 100 100 0.3 7.0 0.7 V V V V V μA μA μS μS μS Unit Conditions VCE=5.0V, IC=1.0A VCE=5.0V, IC=6.0A IC=5.0mA, IE=0 IC=5.0mA, IB=0 IB=5.0mA, IC=0 IC=5.0A, IB=0.5A IC=1.0A, VCE=5.0V VCB=80V, IE=0 VEB=4.0V, IC=0 *hFE V(BR)CBO V(BR)CEO V(BR)EBO *VCE(sat) *VBE(on) ICBO IEBO ton ts tf D.C. Current Gain 20 Collector-Base Breakdo...