2SB800

SMD Type PNP Silicon Epitaxial Transistor 2SB800 Transistors Features World standard miniature package:SOT-89 High collector to emitter voltage:VCEO -80V Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector current(Pulse) * Total power dissipation Junction temperature Storage temperature range * PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -80 -80 -5 -300 -500 2.0 150 -55 to +150 Unit V V V mA mA W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -80 V, IE = 0 VEB = -5.0 V, IC = 0 VCE = -1.0 V, IC = -50 mA VCE = -2.0 V, IC = -300 mA VCE(sat) IC = -300mA, IB = -30mA VBE(sat) IC = -300mA, IB = -30mA VBE fT Cob VCE = -6.0 V, IC = -10 mA VCE = -6.0 V, IE = 10 mA VCB = -6.0 V, IE = 0 , f = 1.0 MHz -600 90 30 200 80 -0.3 -0.9 -660 100 13 -0.6 -1.2 -700 V V mV MHz pF Min Typ Max -100 -100 400 Unit nA nA hFE Classification Marking hFE FM 90 180 FL 135 270 FK 200 400 www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ ...