2SB806

Product specification 2SB806 SOT- 89 4.50¡À0.1 1.80¡À0.1 2 .5 0 ¡À 0 .1 4 .0 0 ¡À 0 .1 ¡ö Unit:mm 1.50 ¡À0.1 Features 1 2 3 ¡ñ High collector to emitter voltage: VCEO£¾-120V. 0 .8 0 ¡À 0 .1 0.44¡À0.1 2 .6 0 ¡À 0 .1 0 .4 0 ¡À 0 .1 1.Base 2.Collector 3.Emitter Min 0.48¡À0.1 0.53¡À0.1 3.00¡À0.1 ¡ö Absolute Maximum Ratings Ta = 25¡æ Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) *1 Collector power dissipation Junction temperature Storage temperature *1. PW¡Ü10ms,duty cycle¡Ü50% Symbol VCBO VCEO VEBO IC IC(pu) Pc Tj Tstg Rating -120 -120 -5 -0.7 -1.2 2 150 -55 to +150 Unit V V V A A W ¡æ ¡æ ¡ö Electrical Characteristics Ta = 25¡æ Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Output capacitance Transition frequency * PW¡Ü350µs,duty cycle΅ά 2% Symbol ICBO IEBO hFE Testconditons VCB = -120V, IE=0 VEB = -5V, IC=0 VCE =-1V , IC = -100mA VCE =-1V , IC = -5.0mA VCE(sat) IC = -500mA , IB = -50mA VBE(sat) IC = -500mA , IB = -50mA VBE Cob fT VCE =-10V , IC = -10mA VCB = -10V , IE = 0 , f = 1.0MHz VCE = -10V , IE = 10mA -550 90 45 200 200 -0.4 -0.9 -620 14 75 -0.6 -1.5 -650 V V mV pF MHz Typ Max -100 -100 400 Unit nA nA hFE Classification Marking hFE KR 90¡« 180 KQ 135¡« 270 KP 200¡« 400 http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Free Datasheet http://www.d...