2SD1619

2SB1119/2SD1619 Elektronische Bauelemente RoHS Compliant Product D D1 A PNP Silicon Medium Power Transistor SOT-89 E1 FEATURES     b1 Power dissipation   P CM : 500mW˄Tamb=25ć˅ 1.BASE Collector current 2.COLLECTOR A ICM : -1 3.EMITTER Collector-base voltage V VB(BR)CBO : -25 Operating and storage junction temperature range TJˈTstg: -55ć to +150ć b L E e e1 C Dimensions In Millimeters Symbol A b b1 c D D1 E E1 e e1 L 2.900 0.900 Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 ELECTRICAL CHARACTERISTICS˄Tamb=25ć unlessotherwise specified˅CLASSIFICATION OF hFE(1) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE˄1˅ Test conditions MIN -25 -25 -5 TYP MAX UNIT V V V Ic=-10­A ˈIE=0 IC= -1 mA , IB=0 IE= -10 ­AˈIC=0 VCB= -20 V , IE=0 -0.1 -0.1 -0.1 100 40 -0.7 -1.2 180 25 ­A ­A ­A VCE= -20 V , IB=0 VEB=-4V , IC=0 VCE= -2V, IC= -50mA VCE=-2V, IC= -1A IC=-0.5A, IC=-0.5A, VCE= -10V, IB= -50mA IB= -50mA IC=-50mA 560 DC current gain hFE˄2˅ Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) ...