AP9992AGP-HF

AP9992AGP-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Lower Gate Charge ▼ RoHS Compliant & Halogen-Free G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 60V 3.5mΩ 161A Description AP9992A series are from Advanced Power innovated design and silicon The Advanced Power MOSFETs from APEC provide the process technology to achieve the lowest possible on-resistance and fast designer with the best combination of fast switching, switching performance. It provides the designer with an extreme efficient ruggedized device design, low on-resistance and cost-effectiveness. device for use in a wide range of power applications The TO-220 package is widely preferred for all commercial-industrial G D through hole applications. The low thermal resistance and low package S cost contribute to the worldwide popular package. TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Chip) Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 3 Rating 60 +20 161 120 102 300 166 2 -55 to 150 -55 to 150 Units V V A A A A W W ℃ ℃ Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resis...