KTC4377

KTC4377 TRANSISTOR (NPN) FEATURES Low voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 30 10 6 2 0.5 150 -55-150 Units V V V A W ℃ ℃ SOT-89 1. BASE 2. COLLECTOR 1 2 3 3. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat) VBE fT Cob VCE=1V,IC=2A IC=2A,IB=50mA VCE=1V,IC=2A VCE=1V,IC=0.5A VCB=10V,IE=0,f=1MHz 150 27 70 0.5 1.5 V V MHz pF Test conditions MIN 30 10 6 0.1 0.1 140 600 TYP MAX UNIT V V V μA μA IC=1mA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0 VCB=30V,IE=0 VEB=6V,IC=0 VCE=1V,IC=0.5A CLASSIFICATION OF Rank Range Marking hFE(1) A 140-240 SA B 200-330 SB C 300-450 SC D 420-600 SD 1 JinYu semiconductor www.htsemi.com Free Datasheet http://www.datasheet4u.com/ Date:2011/05 KTC4377 Typical Characteristics 2 JinYu semiconductor www.htsemi.com Free Datasheet http://www.datasheet4u.com/ Date:2011/05 ...