KTC4377
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1 2 3
Features:
* Low satura...
KTC4377
NPN EPITAXIAL PLANAR
TRANSISTOR
P b Lead(Pb)-Free
1. BASE 2. COLLECTOR 3. EMITTER
1 2 3
Features:
* Low saturation voltage, VCE(sat) ≤0.5V@2A/50mA * Excellent DC current gain characteristics.
SOT-89
Mechanical Data:
* Case : Molded Plastic
ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 30 10 6 2 0.5 150 -55 - 150 Unit V V V A W ˚C ˚C
WEITRON
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1/4
10-Jul-07
Free Datasheet http://www.datasheet4u.com/
KTC4377
ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=1mA,IE=0 Collector-Emitter Breakdown Voltage IC=10mA,IB=0 Emitter-Base Breakdown Voltage IC=0,IE=1mA Collector Cut-O Current IE=0,VCB=30V Emitter-Cut-O Current IC=0,VEB=6V ON CHARACTERISTICS* DC Current Gain IC=0.5A,VCE=1V IC=2A,VCE=1V Collector-Emitter Saturation Voltage IC=2A, IB=50mA Base-emitter on voltage IC=2A,VCE=1V *Pulse Test: Pluse Width ≤ 380µs, Duty Cycle ≤ 2%. DYNAMIC CHARACTERISTICS Transition Frequency IC=0.5A,VCE=1V Collector Output Capacitance IE=0,VCB=10V,f=1MHz fT Cob 150 27 MHz pF hFE(1) hFE(2) VCE(sat) VBE(on) 140 70 600 0.5 1.5 V V Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 30 10 6 Typ Max 0.1 0.1 Unit V V V µA µA
CLASSIFICATION OF hFE(1) Rank Range Marking A 140-240 SA B 200-330 SB C 300-450 SC D 420-600 SD
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