KTC4379

KTC4379 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ Tstg Value 50 50 5 2.0 0.5 150 -55 to 150 Unit V V V A W ˚C ˚C WEITRON http://www.weitron.com.tw 1/5 05-Feb-09 Free Datasheet http://www.datasheet4u.com/ KTC4379 ELECTRICAL CHARACTERISTICS Characteristics Collector-Base Breakdown Voltage IC=1mA,IE=0 Collector-Emitter Breakdown Voltage IC=10mA,IB=0 Emitter-Base Breakdown Voltage IC=0,IE=1mA IE=0,VCB=50V IC=0,VEB=5V ON CHARACTERISTICS DC Current Gain IC=0.5A,VCE=2V IC=1.5A,VCE=2V Collector-Emitter Saturation Voltage IC=1A, IB =50mA Base-Emitter Saturation Voltage IC=1A, IB =50mA DYNAMIC CHARACTERISTICS Transition Frequency IC=50mA,VCE=2V Collector Output Capacitance IE=0,VCB=10V,f=1MHz Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A Switching Time VCC=30V,IC=1A,IB1=-IB2=-0.05A CLASSIFICATION OF hFE(1) Rank Range Marking O 70-140 UO Y 120-240 UY Turn on Time Storage Time Fall Time fT Cob t on tstg tf 120 30 0.1 1.0 0.1 MHz pF hFE(1) hFE(2) VCE(sat) VBE(sat) 70 40 240 0.5 1.2 Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 50 50 5 Typ Max 0.1 0.1 Unit V V V µA µA V V WEITRON http://www.weitron.com.tw 2/5 05-Feb-09 Free Datasheet http://www.datasheet4u.com/ ...