KTC4379

KTC4379 TRANSISTOR (NPN) FEATURES Low saturation voltage z High speed switching time z Complementary to KTA1666 z MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 5 2 500 150 -55-150 Units V V V A mW ℃ ℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn on Time Switching Time Storage Time Fall Time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob ton tstg tf VCC=30V, IC=1A, IB1=-IB2=-0.05A Test IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=1.5A IC=1A, IB=50mA IC=1A, IB=50mA VCE=2V, IC=500mA VCB=10V, IE=0, f=1MHz 120 30 0.1 1.0 0.1 μs 70 40 0.5 1.2 V V MHz pF conditions MIN 50 50 5 0.1 0.1 240 TYP MAX UNIT V V V μA μA CLASSIFICATION OF Rank Range Marking 1 hFE(1) O 70-140 UO Y 120-240 UY JinYu semiconductor www.htsemi.com Free Datasheet http://www.datasheet4u.com/ Date:2011/05 KTC4379 Typical Characteristics 2 ...