KTD1898
Epitaxial Planar NPN Transistors
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25...
KTD1898
Epitaxial Planar
NPN Transistors
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Temperature
* Single pulse Pw = 20ms
Symbol
Limits 100 80 5 1 2 0.5 150, -55 to +150
Unit
VCBO VCEO VEBO IC I CP PC Tj , Tstg
Vdc Vdc Vdc A(DC) A (Pulse)* W
C
C unless otherwise noted ) ELECTRICAL CHARACTERISTICS (Ta=25% Parameter Symbol Collector-Base Breakdown Voltage(Ic=100uA) Collector-Emitter Breakdown Voltage(Ic=1mA) Emitter-Base Breakdown Voltage(I E =100uA) Collector Cutoff Current(VCB=80V) Emitter Cutoff Current(VEB =4V) BV CBO BV CEO BVEBO ICBO IEBO
Min
Typ -
Max -
Unit
100 80 5
-
V V V uA uA
1 1
WEITRON
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Free Datasheet http://www.datasheet4u.com/
KTD1898
C unless otherwise noted ) (Countinued) ELECTRICAL CHARACTERISTICS (Ta=25% Min Typ Max Unit Parameter Symbol
DC Current Gain (VCE =3V, Ic=500mA) Collector-Emitter Saturation Voltage (Ic=500mA, IB =20mA) Transition Frequency (VCE=10V, Ic=50mA, f=100MHz) Output Capacitance (VCB=10V, I E=0A, f=1MHz) h FE V CE(sat) fT Cob 70
-
400 0.4
-
-
V MHz pF
100 20
CLASSIFICATION OF hFE
Marking Rank Range ZO O 70-140 ZY Y 120-240 ZG GR 200-400
ELECTRICAL CHARACTERISTIC CURVES
1000
T a=25 °C
C OLLE C TOR C UR R E NT : I C (mA)
C OLLE C T OR C UR R E NT : I C ( A)
T a=25 °C V C E =5V
1.0 0.8 0.6 0.4
6mA 5mA 4...