SI3407DV

New Product Si3407DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.0240 at VGS = - 4.5 V 0.0372 at VGS = - 2.5 V ID (A) - 8.0a - 8.0 a FEATURES Qg (Typ.) 21 nC TrenchFET® Power MOSFET PWM Optimized 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT APPLICATIONS Load Switch - Notebook PC - Portable Devices TSOP-6 Top View 1 3 mm 6 (4) S 2 5 Marking Code (3) G 07 XXX Lot Traceability and Date Code Part # Code (1, 2, 5, 6) D P-Channel MOSFET 3 4 2.85 mm Ordering Information: Si3407DV-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit - 20 ± 12 - 8.0a - 8.0a - 7.5b, c - 6.0b, c - 25 - 3.5 - 1.7b, c -8 3.2 4.2 2.7 2.0b, c 1.3b, c - 55 to 150 Unit V A mJ W TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 45 25 Maximum 62.5 30 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State ...