IXFH17N80Q

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 17N80Q IXFT 17N80Q VDSS ID25 RDS(on) = 800 V = 17 A = 0.60 Ω trr ≤ 250 ns Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ± 20 ± 30 17 68 17 30 1.0 5 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C g g TO-268 (D3) (IXFT) Case Style G S (TAB) TO-247 AD (IXFH) (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-268 300 1.13/10 Nm/lb.in. 6 4 Features z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 800 2.0 4.5 ±100 25 1 0.60 V V nA µA mA Ω z z z IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Fast switching Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density © 2003...