Document
AP630GP
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Dynamic dv/dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement
G D S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID TO-220
200V 400mΩ 9A
Description
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The through-hole version (AP630GP) is available for low-profile applications.
D
G S
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 200 ± 30 9 5.7 36 74 0.59
2
Units V V A A A W W/ ℃ mJ A mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
240 9 7 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.7 62 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200219032
Free Datasheet http://www.datasheet4u.com/
AP630GP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 200 2 -
Typ. 0.248 40 25 3.6 14 8 26 34 22 515 90 40
Max. Units 400 4 10 100 ±100 V V/℃ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC)
o
VGS=10V, ID=5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=200V, VGS=0V VDS=160V, VGS=0V VGS= ± 30V ID= 9A VDS=160V VGS=10V VDD=100V ID= 9A RG=10Ω,VGS=10V RD=11Ω VGS=0V VDS=25V f=1.0MHz
Gate-Source Forward Leakage Total Gate Charge
3
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
3
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=1.3V
1
Min. -
Typ. -
Max. Units 9 36 1.3 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Tj=25℃, IS=9A, VGS=0V
Notes:
1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=4.5mH , RG=25Ω , IAS=9A. 3.Pulse width <300us , duty cycle <2%.
Free Datasheet http://www.datasheet4u.com/
AP630GP
10 14
T C =25 o C
V G =10V V G =8.0V V G =7.0V
ID , Drain Current (A)
8
T C =150 o C
V G =10V V G =8.0V V G =7.0V V G =6.0V
12
ID , Drain Current (A)
10
6
8
V G =6.0V
6
4
V G =5.0V
4
V G =5.0V
2
2
V G =4.0V
V G =4.0V
0 0 2 4 6 8 10 12 14 0 0 2 4 6 8 10 12 14
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.2
3
I D =5A
2.5
1.1
V G =10V
Normalized BVDSS (V)
1
Normalized R DS(ON)
-50 0 50 100 150
2
1.5
1
0.9
0.5
0.8
0 -50 0 50 100 150
T j , Junction Temperature ( o C )
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction Temperature
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Free Datasheet http://www.datasheet4u.com/
AP630GP
10
80
8
60
ID , Drain Current (A)
6
PD (W)
4 2 0 25 50 75 100 125 150
40
20
0
0
50
100
150
T c , Case Temperature ( C)
o
Tc , Case Temperature ( C)
o
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
10us
10
Normalized Thermal Response (R thjc)
DUTY=0.5
0.2
100us ID (A)
0.1
0.1
0.05
1ms
1
PDM
0.02 SINGLE PULSE 0.01
10ms 100ms T c =25 o C Single Pulse
t T
Duty factor = t/T Peak Tj = P DM x Rthjc + TC
0 1 10 100 1000
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Free Datasheet http://www.datasheet4u.com/
AP630GP
f=1.0MHz
16
10000
I D =9A
14
VGS , Gate to Source Voltage (V)
V DS =80V
12
V DS =120V
10
Ciss
V DS =160V C (pF)
100
8
Coss
6
4
Crss
2
0 0 5 10 15 20 25 30 35
1 1 11 21 31
Q G , Total Gate Charge (nC)
V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100.00
4
10.00
T j =150 o C T j =25 o C
1.00
3.5
VGS(th) (V)
IS (A)
3
0.10
2.5
0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
2 -50 0 50 100 150
V SD (V)
T j Junction Temperayure ( C)
o
Fig 11. Forward Characteristic of
Reverse Diode
Fig 1.