Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated Transistors
2SB1132
FEATURES Power dissipation PCM: 0.5 W...
Transys
Electronics
L I M I T E D
SOT-89 Plastic-Encapsulated
Transistors
2SB1132
FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃)
TRANSISTOR (
PNP)
SOT-89
1. BASE 2. COLLECTOR 3. EMITTER 1 2 3
Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) Test conditions MIN TYP MAX UNIT V V V
Ic=-50µA, IE=0 Ic=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-3V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-50mA, f=30MHz VCB=-10V, IE=0, f=1MHz
-40 -32 -5 -0.5 -0.5 82 390 -0.5 150 20
30
µA µA
V MHz pF
fT
Cob
CLASSIFICATION OF hFE(1) Rank Range Marking P 82-180 BAP Q 120-270 BAQ R 180-390 BAR
Free Datasheet http://www.datasheet4u.com/
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