2SB1169A

Power Transistors 2SB1169, 2SB1169A Silicon PNP epitaxial planar type For power amplification Unit : mm ■ Features High forward current transfer ratio hFE which has satisfactory linearity Low collector-emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 (1.0) ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1169 2SB1169A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −5 −1 −2 15 1.3 150 −55 ∼ +150 °C °C V A A W V Unit V 12.6±0.3 7.2±0.3 (1.0) 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3 0.9±0.1 0˚ to 0.15˚ Collector-emitter voltage 2SB1169 (Base open) 2SB1169A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation 1: Base 2: Collector 3: Emitter I-G1 Package Note) Self-supported type package is also prepared. ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-emitter cutoff current (E-B short) Collector-emitter cutoff current (Base open) 2SB1169 2SB1169A 2SB1169 2SB1169A IEBO hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time VCE(sat) fT ton tstg tf ICEO 2SB1169 2SB1169A VBE ICES VCE = −4 V, IC = −1 A VC...