Power Transistors
2SB1179, 2SB1179A
Silicon PNP epitaxial planar type darlington
For power amplification and switching ...
Power
Transistors
2SB1179, 2SB1179A
Silicon
PNP epitaxial planar type darlington
For power amplification and switching Complementary to 2SD1749, 2SD1749A ■ Features
High forward current transfer ratio hFE which has satisfactory linearity High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
12.6±0.3 7.2±0.3
Unit: mm
7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2
0˚ to 0.15˚
2.5±0.2
(1.0)
(1.0)
1.1±0.1
1.0±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB1179 2SB1179A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 15 1.3 150 −55 to +150 °C °C V A A W V Unit V
0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3
0.9±0.1 0˚ to 0.15˚
Collector-emitter voltage 2SB1179 (Base open) 2SB1179A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
1: Base 2: Collector 3: Emitter I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C B
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB1179 2SB1179A 2SB1179 2SB1179A IEBO hFE1 hFE2 * Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) fT ton tstg tf IC...