Power Transistors
2SB1180, 2SB1180A
Silicon PNP epitaxial planar type darlington
Unit: mm
For medium-speed voltage swi...
Power
Transistors
2SB1180, 2SB1180A
Silicon
PNP epitaxial planar type darlington
Unit: mm
For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A ■ Features
High forward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
12.6±0.3 7.2±0.3
7.0±0.3 3.0±0.2 2.0±0.2
3.5±0.2
0˚ to 0.15˚
2.5±0.2
(1.0)
(1.0)
1.1±0.1
1.0±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) 2SB1180 2SB1180A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −7 −8 −12 15 1.3 150 −55 to +150 °C °C V A A W V Unit V
0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3
0.9±0.1 0˚ to 0.15˚
Collector-emitter voltage 2SB1180 (Base open) 2SB1180A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation
1: Base 2: Collector 3: Emitter I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C B
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB1180 2SB1180A 2SB1180 2SB1180A IEBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf ICBO VCB = −60 V, IE = 0 VCB = −80 V, IE = 0 VEB = −7 V, IC = 0 VCE = −3 V, IC = −4...