2SB1180A

Power Transistors 2SB1180, 2SB1180A Silicon PNP epitaxial planar type darlington Unit: mm For medium-speed voltage switching Complementary to 2SD1750, 2SD1750A ■ Features High forward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment 12.6±0.3 7.2±0.3 7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 2.5±0.2 (1.0) (1.0) 1.1±0.1 1.0±0.2 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB1180 2SB1180A VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C Junction temperature Storage temperature Symbol VCBO Rating −60 −80 −60 −80 −7 −8 −12 15 1.3 150 −55 to +150 °C °C V A A W V Unit V 0.75±0.1 0.4±0.1 2.3±0.2 4.6±0.4 1 2 3 0.9±0.1 0˚ to 0.15˚ Collector-emitter voltage 2SB1180 (Base open) 2SB1180A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation 1: Base 2: Collector 3: Emitter I-G1 Package Note) Self-supported type package is also prepared. Internal Connection C B ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) 2SB1180 2SB1180A 2SB1180 2SB1180A IEBO hFE1 * hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT ton tstg tf ICBO VCB = −60 V, IE = 0 VCB = −80 V, IE = 0 VEB = −7 V, IC = 0 VCE = −3 V, IC = −4...