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2SB1182-Q

MCC

PNP Transistor

MCC Micro Commercial Components 2SB1182-P TM   omponents 20736 Marilla Street Chatsworth  ...


MCC

2SB1182-Q

File Download Download 2SB1182-Q Datasheet


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MCC Micro Commercial Components 2SB1182-P TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SB1182-Q 2SB1182-R PNP Silicon Epitaxial Transistors Features x x Low Collector Saturation Voltage Execllent current-to-gain characteristics Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating -32 -40 -5.0 -2.0 1.5 150 -55 to +150 Unit V V V A W к к K I C DPAK J H 1 O 2 3 M V 4 F E Electrical Characteristics @ 25к Unless Otherwise Specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob Parameter Collector-base Breakdown Voltage (IC=-50uAdc, IE=0) Collector-Emitter Breakdown Voltage (IC=-1mAdc, IB=0) Emitter-base Breakdown Voltage (IE=-50uAdc, IC=0) Collector-Base Cutoff Current (VCB=-20Vdc,IE=0) Emitter-Base Cutoff Current (VEB=-4Vdc, IC=0) DC Current Gain (IC=-0.5Adc, VCE=-3.0Vdc) Collector-Emitter Saturation Voltage (IC=-2Adc, IB=-200mAdc) Transition Frequency (VCE=-5Vdc, IC=-500mAdc,f=30MHz) Collector output capacitance (VCB=-10Vdc, IE=0,f=1.0MHz) Min -40 -32 -5 ----82 --Typ --------------100 --50 Max -------1.0 -1.0 390 -0.8 ----Units Vdc Vdc Q G Vdc uAdc uAdc --Vdc MHz pF DIM A B C D E F G H I J K L M O Q V DIMENSIONS INCHES MIN MAX 0.08...




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