2SB1197

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z z z z Small surface mounting type. Corredtor peak current(Max.=1000mA) Suitable for high packing density. Low voltage(Max.=40v) High saturation current capability. Voltage controlled small signal switch. Production specification 2SB1197 Pb Lead-free APPLICATIONS z z Telephone and professional communication equipment. Other switching appilications. SOT-23 ORDERING INFORMATION Type No. 2SB1197 Marking AHP,AHQ,AHR Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -40 -32 -5 -800 200 -55~150 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC016 Rev.A www.galaxycn.com 1 Free Datasheet http://www.datasheet4u.com/ BL Galaxy Electrical Silicon Epitaxial Planar Transistor Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Test conditions IC=-50μA,IE=0 IC=-1mA,IB=0 B Production specification 2SB1197 MIN -40 -32 -5 -0.5 -0.5 82 390 -0.5 50 V MHz TYP MAX UNIT V V V μA μA IE=-50μA,IC=0...