2SB1197

2SB1 1 97 TRANSISTOR(PNP) SOT-23 Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. Complements the 2SD1781. z MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -32 -5 -0.8 200 150 -55-150 Units V V V A mW ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test conditions IE=0 MIN -40 -32 -5 -0.5 -0.5 82 390 -0.5 50 200 12 30 V MHz pF TYP MAX UNIT V V V IC =-50μA, IC = -1mA, IB=0 IE= -50μA, IC=0 VCB=-20V,IE=0 VEB= -4V,IC=0 VCE=-3V,IC= -100mA IC=-500 mA, IB= -50mA VCE=-5V, IC= -50mA, f=100MHz VCB=-10V,IE=0,f=1MHz μA μA fT Cob CLASSIFICATION OF hFE Rank Range Marking P 82-180 AHP Q 120-270 AHQ R 180-390 AHR 1 JinYu semiconductor www.htsemi.com Free Datasheet http://www.datasheet4u.com/ Date:2011/05 2SB1 1 97 TYPICAL CHARACTERISTICS 2SB1197 2 JinYu semiconductor www.htsemi.com Date:2011/05 Free Datasheet http://www.datasheet4u.com/ ...