2SB1217

isc Silicon PNP Power Transistor 2SB1217 DESCRIPTION ·High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1818 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, driver, solenid and motor . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICP Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range -60 V -60 V -7 V -3 A -5 A -0.5 A 10 W 1.3 150 ℃ -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -0.2A ; VCE= -2V hFE-2 DC Current Gain IC= -0.6A ; VCE= -2V hFE-3 DC Current Gain IC= -2.0A ; VCE= -2V  hFE-2 Classifications M L K 100-200 160-320 200-400 2SB1217 MIN TYP. MAX UN...