SMD Type
Transistors IC
PNP Epitaxial Planar Silicon Transistors 2SB1295
SOT-23
Unit: mm
Features
Large current capaci...
SMD Type
Transistors IC
PNP Epitaxial Planar Silicon
Transistors 2SB1295
SOT-23
Unit: mm
Features
Large current capacity.
+0.1 2.4-0.1
+0.1 2.9-0.1 +0.1 0.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
smaller and slimer.
0.55
Very small-sized package permitting sets to be made
+0.1 1.3-0.1
Low collector to emitter saturation voltage.
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -15 -15 -5 -0.8 -3 200 150 -55 to +150 Unit V V V A A mW
Electrical Characteristics Ta = 25
Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -12V , IE = 0 VEB = -4V , IC = 0 VCE = -2V , IC = -50mA VCE = -2V , IC = -50mA VCB = -10V , f = 1MHz 135 300 15 -10 -100 -0.9 -15 -15 -5 -25 -200 -1.2 Min Typ Max -100 -100 600 MHz pF mV mV V V V V Unit nA nA
VCE(sat) IC = -5mA , IB = -0.5mA VCE(sat) IC = -400mA , IB = -20mA VBE(sat) IC = -400mA , IB =-20mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , ...